Silicon Carbide (SiC) MOSFET

Silicon Carbide (SiC) MOSFET to become the de-facto standard for EVs and HEVs applications. Bright TOWARD Industrial Co., Ltd. announced TO247 SiC Poer MOSFET from 650V/110A to 1700V/3.4A, TO220 SiC Power MOSFET from 650V/12A to 52A models. These products significantly reduce turn-off losses compare with conventional IGBTs. As a result, these solve design engineers’ difficult tasks to achieve high power capability and low conductive losses. Noticeably Bright TOWARD extends their SiC technology to well-known Relay products line, 50 Series SiC MOSFET relay (650V/300mA), 51 Series SiC MOSFET relay (1200V/250mA), 52 Series SiC MOSFET relay (1700V/350mA), and 53 Series SiC MOSFET relay (3300V/300mA). These products achieve both high load voltage with high load current and low and stable On-Resistance.

Silicon Carbide MOSFET vs Silicon MOSFET and IGBT

SiC MOSFET is able to gain lower ON-Resistance and higher voltage with the same chip size of conventional Si MOSFET. SiC MOSFETs generate no tail current and reduce a turn-off loss for replacement of Si-IGBT. By these superior characteristics, these products are suitable for applications in Energy Storage System (ESS) and Battery Management Systems (BMS).

Opto SiC MOSFET Relay Products

Opto Silicon Carbide (SiC) MOSFET relays.

SiC MOSFET Products

N-Channel Enhancement Mode

Part NumberVDS (V)IDS @25C (A)RDSon (mOhms)PackageDatasheet
TSC065F02065011020TO247pdf
TSC065F0506505250TO247pdf
TSC065F10065025100TO247pdf
TSC065F20065012200TO247pdf
TSC120F03012008030TO247pdf
TSC120F06012004160TO247pdf
TSC120F120120020120TO247pdf
TSC120F240120010240TO247pdf
TSC170F04517005845TO247pdf
TSC170F1K017003.41000TO247pdf
TSC065B0506505250TO220
TSC065B10065025100TO220ASK
TSC065B20065012200TO220ASK